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Partially Stabilized Zirconia (PSZ)

In addition to high strength, hardness, high temperature resistance, acid and alkali corrosion resistance and high chemical stability and other conditions of precision ceramics, zirconia also has a higher tenacity than ordinary ceramics, making zirconia used in various industries, such as shaft seal bearing, cutting elements, mold, automobile part.

Partially Stabilized Zirconia (PSZ)

In addition to high strength, hardness, high temperature resistance, acid and alkali corrosion resistance and high chemical stability and other conditions of precision ceramics, zirconia also has a higher tenacity than ordinary ceramics, making zirconia used in various industries, such as shaft seal bearing, cutting elements, mold, automobile part.

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Scanning electron microscopy (SEM)

System : ZrO2-Y2O3

Composition: ZrO2 92.5, Y2O3 7.5 (wt%)

Processing: Homogenised oven spheroidisation

Applications: For plasma spraying


Partially Stabilized Zirconia (PSZ) is a type of zirconium oxide produced by our company, PSZ by adding Y2O3 to tetragonal phase distribution in the cubic phase, so the higher toughness, suitable for replace the metal parts easy to improve poor corrosion and wear resistance, strength is not easy to deformation and no defects, as well as resistance to high temperature of effective control of operating costs.

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Main component 99%Al2O3 S-SiC ZrO2 Si3N4 TC
Physical Property Density g/cm3 3.90 3.1 6 3.2 14.55
Water Absorption % 0 0.1 0 0.1
Sinter Temperature °C 1700 2200 1500 1800
Mechanical Property Rockwell Hardness HV 1700 2200 1300 1400
Bend Strength kgf/mm2 3500 4000 9000 7000 7000
Compression Intensity Kgf/mm2 30000 20000 20000 23000 23000
Thermal Property Maximum working temperature °C 1500 1600 1300 1400 1400
thermal expansion coefficient  0-1000°C /°C 8.0*10-6 4.1*10-6(0-500°C) 9.5*10-6 2.0*10-6(0-500°C) 2.0*10-6(0-500°C)
5.2*10-6(500-1000°C) 4.0*10-6(500-1000°C) 4.0*10-6(500-1000°C)
Thermal Shock resistance T(°C) 200 250 300 400-500 400-500
Thermal Conductivity W/m.k(25°C 31 100 3 25 25
          300°C) 16 100 3 25 25
Electrical  Property Resisting rate of Volume ◎.cm          
20°C >1012 106-108 >1010 >1011 >1011
100°C 1012-1013 >1011 >1011
300°C >1012 >1011 >1011
Insulation Breakdown Intensity KV/mm 18 semiconductor 9 17.7 17.7
Dielectric Constant (1 MHz) (E) 10 29 7 7
Dielectric Dissipation (tg o) 0.4*10-3














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